TK110A10PL,S4X

MOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS

SKU: TK110A10PL,S4X

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MOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS

Products specifications

Manufacturer	Toshiba
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220SIS-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	36 A
Rds On - Drain-Source Resistance	16 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	33 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	36 W
Configuration	Single
Channel Mode	Enhancement
Tradename	U-MOSIX-H
Packaging	Tube
Transistor Type	1 N-Channel
Brand	Toshiba
Fall Time	9 ns
Product Type	MOSFET
Rise Time	6 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	20 ns
Unit Weight	1.700 g

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Products specifications

Manufacturer	Toshiba
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220SIS-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	36 A
Rds On - Drain-Source Resistance	16 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	33 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	36 W
Configuration	Single
Channel Mode	Enhancement
Tradename	U-MOSIX-H
Packaging	Tube
Transistor Type	1 N-Channel
Brand	Toshiba
Fall Time	9 ns
Product Type	MOSFET
Rise Time	6 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	20 ns
Unit Weight	1.700 g