Bipolar Transistors - BJT
Lead Time: 0 Days
Products specifications
Manufacturer | ON Semiconductor |
Product Category | Bipolar Transistors - BJT |
RoHS | N |
Mounting Style | Through Hole |
Package/Case | TO-220F-3 |
Transistor Polarity | NPN |
Collector- Emitter Voltage VCEO Max | 400 V |
Collector- Base Voltage VCBO | 700 V |
Emitter- Base Voltage VEBO | 9 V |
Collector-Emitter Saturation Voltage | 3 V |
Maximum DC Collector Current | 12 A |
Pd - Power Dissipation | 50 W |
Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C |
DC Current Gain hFE Max | 40 |
Technology | Si |
Brand | ON Semiconductor / Fairchild |
Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors |
Unit Weight | 3.610 g |