MOSFETs Polar3 HiPerFET Power MOSFETs
Products specifications
Manufacturer | IXYS |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | Through Hole |
Package/Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 300 V, 500 V |
Id - Continuous Drain Current | 56 A, 5 A |
Rds On - Drain-Source Resistance | 27 mOhms, 1.65 Ohms |
Vgs - Gate-Source Voltage | 10 V, 30 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V, 5 V |
Qg - Gate Charge | 56 nC, 6.9 nC |
Pd - Power Dissipation | 320 W, 114 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | HiPerFET |
Packaging | Tube |
Series | HiPerFET, IXFP5N50 |
Brand | IXYS |
Forward Transconductance - Min | 26 S, 2.5 S |
Fall Time | 10 ns, 12 ns |
Product Type | MOSFET |
Rise Time | 26 ns, 13 ns |
Factory Pack Quantity | 50 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 64 ns, 28 ns |
Typical Turn-On Delay Time | 21 ns, 14 ns |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Height | 16 mm |
Length | 10.66 mm |
Type | Polar3 HiperFET Power MOSFET |
Width | 4.83 mm |
Unit Weight | 350 mg |