IXFP5N100PM

MOSFETs TO220 1KV 5A N-CH POLAR

SKU: IXFP5N100PM

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R 128.18

R 114.17

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MOSFETs TO220 1KV 5A N-CH POLAR

Products specifications

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V, 500 V, 1 kV
Id - Continuous Drain Current	56 A, 5 A
Rds On - Drain-Source Resistance	27 mOhms, 1.65 Ohms, 2.8 Ohms
Vgs - Gate-Source Voltage	10 V, 30 V
Vgs th - Gate-Source Threshold Voltage	2.5 V, 5 V
Qg - Gate Charge	56 nC, 6.9 nC
Pd - Power Dissipation	320 W, 114 W, 250 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET, IXFP5N50, IXFP5N100
Brand	IXYS
Forward Transconductance - Min	26 S, 2.5 S
Fall Time	10 ns, 12 ns
Product Type	MOSFET
Rise Time	26 ns, 13 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	64 ns, 28 ns
Typical Turn-On Delay Time	21 ns, 14 ns
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	16 mm
Length	10.66 mm
Type	Polar3 HiperFET Power MOSFET
Width	4.83 mm
Unit Weight	350 mg, 2.300 g
Transistor Type	1 N-Channel

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Products specifications

Manufacturer	IXYS
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	300 V, 500 V, 1 kV
Id - Continuous Drain Current	56 A, 5 A
Rds On - Drain-Source Resistance	27 mOhms, 1.65 Ohms, 2.8 Ohms
Vgs - Gate-Source Voltage	10 V, 30 V
Vgs th - Gate-Source Threshold Voltage	2.5 V, 5 V
Qg - Gate Charge	56 nC, 6.9 nC
Pd - Power Dissipation	320 W, 114 W, 250 W
Configuration	Single
Channel Mode	Enhancement
Tradename	HiPerFET
Packaging	Tube
Series	HiPerFET, IXFP5N50, IXFP5N100
Brand	IXYS
Forward Transconductance - Min	26 S, 2.5 S
Fall Time	10 ns, 12 ns
Product Type	MOSFET
Rise Time	26 ns, 13 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-Off Delay Time	64 ns, 28 ns
Typical Turn-On Delay Time	21 ns, 14 ns
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	16 mm
Length	10.66 mm
Type	Polar3 HiperFET Power MOSFET
Width	4.83 mm
Unit Weight	350 mg, 2.300 g
Transistor Type	1 N-Channel