MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC
Lead Time: 0 Days
Products specifications
Manufacturer | Infineon |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | SMD/SMT |
Package/Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 4 mOhms |
Vgs - Gate-Source Voltage | 12 V |
Qg - Gate Charge | 48 nC |
Pd - Power Dissipation | 63 W |
Packaging | Tube |
Configuration | Single |
Height | 2.3 mm |
Length | 6.5 mm |
Transistor Type | 1 N-Channel |
Width | 6.22 mm |
Brand | Infineon / IR |
Product Type | MOSFET |
Factory Pack Quantity | 3000 |
Subcategory | MOSFETs |
Part # Aliases | SP001578814 |
Unit Weight | 4 g |