IRF640

MOSFETs TO263 200V 18A N-CH MOSFET
Lead Time: 91 Days

SKU: IRF640

Availability: 1532 in stock

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R 49.28

R 38.24

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MOSFETs TO263 200V 18A N-CH MOSFET
Lead Time: 91 Days

Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	18 A
Rds On - Drain-Source Resistance	180 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 W
Configuration	Single
Channel Mode	Enhancement
Packaging	Tube
Height	9.15 mm
Length	10.4 mm
Series	IRF640
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Forward Transconductance - Min	11 S
Fall Time	25 ns
Product Type	MOSFET
Rise Time	27 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-On Delay Time	13 ns
Unit Weight	330 mg

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Products specifications

Manufacturer	STMicroelectronics
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	18 A
Rds On - Drain-Source Resistance	180 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 W
Configuration	Single
Channel Mode	Enhancement
Packaging	Tube
Height	9.15 mm
Length	10.4 mm
Series	IRF640
Transistor Type	1 N-Channel
Type	MOSFET
Width	4.6 mm
Brand	STMicroelectronics
Forward Transconductance - Min	11 S
Fall Time	25 ns
Product Type	MOSFET
Rise Time	27 ns
Factory Pack Quantity	50
Subcategory	MOSFETs
Typical Turn-On Delay Time	13 ns
Unit Weight	330 mg