MOSFET N-Ch 550V 17A I2PAK-3 CoolMOS CP
Lead Time: 0 Days
Products specifications
Manufacturer | Infineon |
Product Category | MOSFET |
RoHS | Details |
Technology | Si |
Mounting Style | Through Hole |
Package/Case | TO-262-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 550 V |
Id - Continuous Drain Current | 17 A |
Rds On - Drain-Source Resistance | 199 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 34 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 139 W |
Configuration | Single |
Tradename | CoolMOS |
Packaging | Tube |
Height | 9.45 mm |
Length | 10.2 mm |
Series | CoolMOS CE |
Transistor Type | 1 N-Channel |
Width | 4.5 mm |
Brand | Infineon Technologies |
Fall Time | 10 ns |
Product Type | MOSFET |
Rise Time | 14 ns |
Factory Pack Quantity | 500 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 80 nS |
Part # Aliases | IPI50R199CPXKSA1 SP000523756 IPI5R199CPXK IPI50R199CPXKSA1 |
Unit Weight | 2.387 g |