RF MOSFET Transistors RF Transistor
Products specifications
Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 125 V |
Id - Continuous Drain Current | 40 A |
Transistor Polarity | N-Channel |
Packaging | Tray |
Output Power | 300 W |
Gain | 15 dB |
Product Type | RF MOSFET Transistors |