MOSFETs MOSFT 30V 13.6A 9.1mOhm 9.3nC
Lead Time: 0 Days
Products specifications
Pd - Power Dissipation | 2.5 W |
Rds On - Drain-Source Resistance | 9.5 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 13.6 A |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Qg - Gate Charge | 9.3 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |