IGBT Transistors DISCRETES
Products specifications
Pd - Power Dissipation | 625 W |
Configuration | Single |
Maximum Operating Temperature | + 175 C |
Collector-Emitter Saturation Voltage | 3 V |
Continuous Collector Current at 25 C | 62 A |
Minimum Operating Temperature | - 55 C |
Collector- Emitter Voltage VCEO Max | 600 V |
Mounting Style | Through Hole |
Qualification | AEC-Q101 |
Packaging | Tube |
Technology | Si |