MOSFETs AUTO 24V 1 N-CH HEXFET 1.3mOhms
Lead Time: 84 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 24 V |
Qg - Gate Charge | 120 nC |
Qualification | AEC-Q101 |
Packaging | Tube |
Rds On - Drain-Source Resistance | 1.3 mOhms |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 382 A |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 300 W |
Configuration | Single |