MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
Products specifications
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 429 A |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Packaging | Tube |
Rds On - Drain-Source Resistance | 1 mOhms |
Qualification | AEC-Q101 |
Vds - Drain-Source Breakdown Voltage | 24 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 180 nC |
Pd - Power Dissipation | 300 W |
Channel Mode | Enhancement |
Configuration | Single |
Minimum Operating Temperature | - 55 C |