MOSFETs AUTO 55V 1 N-CH HEXFET 7.5mOhms
Lead Time: 84 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 55 V |
Configuration | Single |
Qg - Gate Charge | 63 nC |
Packaging | Tube |
Technology | Si |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 94 A |
Rds On - Drain-Source Resistance | 7.5 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Pd - Power Dissipation | 140 W |
Qualification | AEC-Q101 |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |