RF MOSFET Transistors RF LDMOS FET
Products specifications
Maximum Operating Temperature | + 225 C |
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | 65 V |
Packaging | Reel |
Rds On - Drain-Source Resistance | 30 mOhms |
Output Power | 220 W |
Technology | Si |
Transistor Polarity | N-Channel |
Gain | 20.5 dB |