PXFC192207FH-V3-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXFC192207FH-V3-R0

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Quantity

250+

Price

R 2,849.25

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Packaging	Reel
Gain	20.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Technology	Si
Output Power	220 W
Rds On - Drain-Source Resistance	30 mOhms

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Products specifications

Packaging	Reel
Gain	20.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Technology	Si
Output Power	220 W
Rds On - Drain-Source Resistance	30 mOhms