RF MOSFET Transistors RF LDMOS FET
Products specifications
Output Power | 150 W |
Gain | 20.5 dB |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |
Product Type | RF MOSFET Transistors |
Rds On - Drain-Source Resistance | 50 mOhms |
Vds - Drain-Source Breakdown Voltage | 65 V |
Transistor Polarity | N-Channel |
Technology | Si |