PXAD214218FV-V1-R2

RF MOSFET Transistors RF LDMOS FET

SKU: PXAD214218FV-V1-R2

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Quantity

250+

Price

R 4,005.54

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	Dual N-Channel
Gain	16 dB
Output Power	430 W
Rds On - Drain-Source Resistance	90 mOhms
Product Type	RF MOSFET Transistors

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Products specifications

Maximum Operating Temperature	+ 225 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	Dual N-Channel
Gain	16 dB
Output Power	430 W
Rds On - Drain-Source Resistance	90 mOhms
Product Type	RF MOSFET Transistors