PXAD184218FV-V1-R2

RF MOSFET Transistors RF LDMOS FET

SKU: PXAD184218FV-V1-R2

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

250+

Price

R 4,005.54

Free shipping

RF MOSFET Transistors RF LDMOS FET

Products specifications

Transistor Polarity	Dual N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	420 W
Product Type	RF MOSFET Transistors
Packaging	Reel
Rds On - Drain-Source Resistance	30 mOhms
Gain	16 dB
Maximum Operating Temperature	+ 225 C

Your name *

Your email *

Enquiry *

Products specifications

Transistor Polarity	Dual N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	420 W
Product Type	RF MOSFET Transistors
Packaging	Reel
Rds On - Drain-Source Resistance	30 mOhms
Gain	16 dB
Maximum Operating Temperature	+ 225 C