RF MOSFET Transistors RF LDMOS FET
Products specifications
Product Type | RF MOSFET Transistors |
Rds On - Drain-Source Resistance | 30 mOhms |
Vds - Drain-Source Breakdown Voltage | 65 V |
Packaging | Reel |
Technology | Si |
Output Power | 420 W |
Transistor Polarity | Dual N-Channel |
Maximum Operating Temperature | + 225 C |
Gain | 16 dB |