PXAC261002FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC261002FC-V1-R0

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

50+

Price

R 2,069.42

Free shipping

RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	300 mOhms
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Gain	15.1 dB
Output Power	100 W
Packaging	Reel

Your name *

Your email *

Enquiry *

Products specifications

Rds On - Drain-Source Resistance	300 mOhms
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Gain	15.1 dB
Output Power	100 W
Packaging	Reel