PXAC243502FV-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	88 mOhms
Technology	Si
Packaging	Reel
Output Power	350 W
Product Type	RF MOSFET Transistors
Gain	15 dB
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Maximum Operating Temperature	+ 225 C
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	88 mOhms
Technology	Si
Packaging	Reel
Output Power	350 W
Product Type	RF MOSFET Transistors
Gain	15 dB
Vds - Drain-Source Breakdown Voltage	65 V