PXAC241702FC-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Output Power	150 W
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	190 mOhms
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Gain	16.5 dB
Packaging	Reel

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Products specifications

Maximum Operating Temperature	+ 225 C
Output Power	150 W
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	190 mOhms
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Gain	16.5 dB
Packaging	Reel