PXAC213308FV-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC213308FV-V1-R0

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Quantity

50+

Price

R 3,589.77

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	60 mOhms
Output Power	320 W
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Gain	16.5 dB
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	60 mOhms
Output Power	320 W
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Gain	16.5 dB
Technology	Si