RF MOSFET Transistors RF LDMOS FET
Products specifications
Output Power | 55 W |
Packaging | Reel |
Transistor Polarity | Dual N-Channel |
Vds - Drain-Source Breakdown Voltage | 65 V |
Rds On - Drain-Source Resistance | 380 mOhms |
Technology | Si |
Product Type | RF MOSFET Transistors |
Gain | 17.2 dB |
Maximum Operating Temperature | + 225 C |