PXAC210552FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC210552FC-V1-R0

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R 1,647.99

R 1,590.37

R 1,565.06

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	380 mOhms
Transistor Polarity	Dual N-Channel
Output Power	55 W
Product Type	RF MOSFET Transistors
Gain	17.2 dB

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Products specifications

Technology	Si
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	380 mOhms
Transistor Polarity	Dual N-Channel
Output Power	55 W
Product Type	RF MOSFET Transistors
Gain	17.2 dB