PXAC201602FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC201602FC-V1-R0

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Quantity

50+

Price

R 2,066.45

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	175 mOhms
Gain	17.7 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors

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Products specifications

Output Power	140 W
Technology	Si
Transistor Polarity	Dual N-Channel
Rds On - Drain-Source Resistance	175 mOhms
Gain	17.7 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors