PXAC200902FC-V1-R2

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC200902FC-V1-R2

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Quantity

250+

Price

R 1,414.80

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Technology	Si
Gain	17.2 dB
Rds On - Drain-Source Resistance	220 mOhms
Product Type	RF MOSFET Transistors
Output Power	90 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	Dual N-Channel
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Technology	Si
Gain	17.2 dB
Rds On - Drain-Source Resistance	220 mOhms
Product Type	RF MOSFET Transistors
Output Power	90 W