PXAC200902FC-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC200902FC-V1-R0

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Quantity

50+

Price

R 1,422.34

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	220 mOhms
Technology	Si
Transistor Polarity	Dual N-Channel
Output Power	90 W
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Gain	17.2 dB
Packaging	Reel
Maximum Operating Temperature	+ 225 C

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Products specifications

Rds On - Drain-Source Resistance	220 mOhms
Technology	Si
Transistor Polarity	Dual N-Channel
Output Power	90 W
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Gain	17.2 dB
Packaging	Reel
Maximum Operating Temperature	+ 225 C