PXAC192908FV-V1-R250

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RF MOSFET Transistors RF LDMOS FET

SKU: PXAC192908FV-V1-R250

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	110 mOhms
Transistor Polarity	Dual N-Channel
Packaging	Reel
Technology	Si
Gain	14 dB
Output Power	240 W
Product Type	RF MOSFET Transistors

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	110 mOhms
Transistor Polarity	Dual N-Channel
Packaging	Reel
Technology	Si
Gain	14 dB
Output Power	240 W
Product Type	RF MOSFET Transistors