PXAC192908FV-V1-R0

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC192908FV-V1-R0

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Quantity

50+

Price

R 3,588.96

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Reel
Transistor Polarity	Dual N-Channel
Output Power	240 W
Gain	14 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	110 mOhms
Packaging	Reel
Transistor Polarity	Dual N-Channel
Output Power	240 W
Gain	14 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V