PXAC182908FV-V1-R0

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RF MOSFET Transistors RF LDMOS FET

SKU: PXAC182908FV-V1-R0

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	Dual N-Channel
Gain	15 dB
Output Power	240 W
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	110 mOhms

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Products specifications

Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Transistor Polarity	Dual N-Channel
Gain	15 dB
Output Power	240 W
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	110 mOhms