PXAC182002FC-V1-R250

RF MOSFET Transistors RF LDMOS FET

SKU: PXAC182002FC-V1-R250

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Quantity

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250+

Price

R 2,266.80

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	180 mOhms
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Technology	Si
Gain	16.5 dB
Output Power	180 W
Packaging	Reel

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Products specifications

Rds On - Drain-Source Resistance	180 mOhms
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Technology	Si
Gain	16.5 dB
Output Power	180 W
Packaging	Reel