RF MOSFET Transistors RF LDMOS FET
Products specifications
Vds - Drain-Source Breakdown Voltage | 105 V |
Output Power | 700 W |
Technology | Si |
Packaging | Reel |
Rds On - Drain-Source Resistance | 100 mOhms |
Product Type | RF MOSFET Transistors |
Gain | 16 dB |
Maximum Operating Temperature | + 225 C |
Transistor Polarity | N-Channel |