RF MOSFET Transistors RF LDMOS FET
Products specifications
Product Type | RF MOSFET Transistors |
Gain | 16 dB |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 100 mOhms |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 105 V |
Packaging | Reel |
Output Power | 700 W |
Maximum Operating Temperature | + 225 C |