RF MOSFET Transistors RF LDMOS FET
Products specifications
Vds - Drain-Source Breakdown Voltage | 105 V |
Product Type | RF MOSFET Transistors |
Mounting Style | Screw Mount |
Output Power | 350 W |
Transistor Polarity | N-Channel |
Technology | Si |
Packaging | Reel |
Gain | 17 dB |
Rds On - Drain-Source Resistance | 100 mOhms |
Id - Continuous Drain Current | 150 mA |