RF MOSFET Transistors RF LDMOS FET
Products specifications
Rds On - Drain-Source Resistance | 1.4 Ohms |
Packaging | Reel |
Transistor Polarity | N-Channel |
Output Power | 25 W |
Vds - Drain-Source Breakdown Voltage | 105 V |
Maximum Operating Temperature | + 225 C |
Gain | 18 dB |
Technology | Si |
Product Type | RF MOSFET Transistors |