RF MOSFET Transistors RF LDMOS FET
Products specifications
Rds On - Drain-Source Resistance | 2.96 Ohms |
Gain | 21.5 dB |
Packaging | Reel |
Output Power | 12 W |
Maximum Operating Temperature | + 225 C |
Product Type | RF MOSFET Transistors |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 105 V |