RF MOSFET Transistors RF LDMOS FET
Products specifications
Output Power | 450 W |
Rds On - Drain-Source Resistance | 100 mOhms |
Transistor Polarity | N-Channel |
Packaging | Reel |
Product Type | RF MOSFET Transistors |
Technology | Si |
Maximum Operating Temperature | + 225 C |
Vds - Drain-Source Breakdown Voltage | 105 V |
Gain | 17.5 dB |