RF MOSFET Transistors RF LDMOS FET
Products specifications
Transistor Polarity | N-Channel |
Technology | Si |
Output Power | 200 W |
Rds On - Drain-Source Resistance | 340 mOhms |
Maximum Operating Temperature | + 225 C |
Gain | 18.5 dB |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 105 V |
Product Type | RF MOSFET Transistors |