RF MOSFET Transistors RF LDMOS FET
Products specifications
Rds On - Drain-Source Resistance | 100 mOhms |
Transistor Polarity | Dual N-Channel |
Packaging | Reel |
Maximum Operating Temperature | + 225 C |
Gain | 18 dB |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 105 V |
Product Type | RF MOSFET Transistors |
Output Power | 25 W |