RF MOSFET Transistors RF LDMOS FET
Products specifications
Vds - Drain-Source Breakdown Voltage | 105 V |
Output Power | 240 W |
Product Type | RF MOSFET Transistors |
Technology | Si |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |
Gain | 22 dB |
Rds On - Drain-Source Resistance | 160 mOhms |