RF MOSFET Transistors RF LDMOS FET
Products specifications
Transistor Polarity | N-Channel |
Technology | Si |
Gain | 23.6 dB |
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | 105 V |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |
Output Power | 370 W |
Rds On - Drain-Source Resistance | 120 mOhms |