RF MOSFET Transistors RF LDMOS FET
Products specifications
Technology | Si |
Product Type | RF MOSFET Transistors |
Rds On - Drain-Source Resistance | 2.8 Ohms |
Packaging | Reel |
Maximum Operating Temperature | + 225 C |
Vds - Drain-Source Breakdown Voltage | 105 V |
Output Power | 12 W |
Gain | 25 dB |