RF MOSFET Transistors Power Amplifier
Products specifications
Packaging | Reel |
Output Power | 630 W |
Rds On - Drain-Source Resistance | 70 mOhms |
Vds - Drain-Source Breakdown Voltage | 105 V |
Technology | Si |
Gain | 19 dB |
Mounting Style | Screw Mount |
Product Type | RF MOSFET Transistors |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 600 mA |