RF MOSFET Transistors Power Amplifier
Products specifications
Output Power | 480 W |
Vds - Drain-Source Breakdown Voltage | 105 V |
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 225 C |
Technology | Si |
Transistor Polarity | Dual N-Channel |
Rds On - Drain-Source Resistance | 80 mOhms |
Gain | 17.5 dB |
Packaging | Reel |