RF MOSFET Transistors Power Amplifier
Products specifications
Vds - Drain-Source Breakdown Voltage | 110 V |
Transistor Polarity | Dual N-Channel |
Packaging | Reel |
Gain | 18.5 dB |
Maximum Operating Temperature | + 225 C |
Rds On - Drain-Source Resistance | 70 mOhms |
Output Power | 208 W |
Technology | Si |
Product Type | RF MOSFET Transistors |