RF MOSFET Transistors Power Amplifier
Products specifications
Product Type | RF MOSFET Transistors |
Technology | Si |
Gain | 17 dB |
Vds - Drain-Source Breakdown Voltage | 105 V |
Maximum Operating Temperature | + 225 C |
Transistor Polarity | Dual N-Channel |
Packaging | Reel |
Rds On - Drain-Source Resistance | 120 mOhms |
Output Power | 415 W |