RF MOSFET Transistors Power Amplifier
Products specifications
Output Power | 330 W |
Rds On - Drain-Source Resistance | 400 mOhms |
Packaging | Reel |
Gain | 17.25 dB |
Transistor Polarity | Dual N-Channel |
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 225 C |
Vds - Drain-Source Breakdown Voltage | 105 V |
Technology | Si |