RF MOSFET Transistors Power Amplifier
Products specifications
Transistor Polarity | Dual N-Channel |
Maximum Operating Temperature | + 225 C |
Vds - Drain-Source Breakdown Voltage | 105 V |
Gain | 18.2 dB |
Output Power | 550 W |
Rds On - Drain-Source Resistance | 80 mOhms |
Packaging | Reel |
Product Type | RF MOSFET Transistors |
Technology | Si |