RF MOSFET Transistors Power Amplifier
Products specifications
Rds On - Drain-Source Resistance | 120 mOhms |
Packaging | Reel |
Transistor Polarity | Dual N-Channel |
Maximum Operating Temperature | + 225 C |
Vds - Drain-Source Breakdown Voltage | 105 V |
Output Power | 275 W |
Gain | 18 dB |
Technology | Si |
Product Type | RF MOSFET Transistors |